The present disclosure outlines front-end-of-line (FEOL) processing, middle-end-of-line (MEOL) processing, and back-end-of-line (BEOL) processing for fabricating a memory cell that can be implemented within a data storage device. The memory cell of the present disclosure represents a multiple port memory cell having at least three ports, such as a write-port, a first read-port, and a second read-port. The disclose FEOL processing is used to form semiconductor devices of the memory cell onto diffusion layers and polysilicon layers of a semiconductor layer stack. The disclosed MEOL processing is used to form interconnections, such as one or more vias and/or one or more contacts to provide some examples, between the semiconductor devices and metallization layers of the semiconductor layer stack. The disclosure BEOL processing is used to form the least three ports onto the metallization layers of the semiconductor layer stack.