Invention Grant
- Patent Title: Semiconductor device
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Application No.: US13772407Application Date: 2013-02-21
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Publication No.: US09659653B2Publication Date: 2017-05-23
- Inventor: Toshihiko Saito
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-024867 20100205
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C16/02 ; G11C11/404 ; H01L29/94

Abstract:
An object is to provide a semiconductor device capable of accurate data retention even with a memory element including a depletion mode transistor. A gate terminal of a transistor for controlling input of a signal to a signal holding portion is negatively charged in advance. The connection to a power supply is physically broken, whereby negative charge is held at the gate terminal. Further, a capacitor having terminals one of which is electrically connected to the gate terminal of the transistor is provided, and thus switching operation of the transistor is controlled with the capacitor.
Public/Granted literature
- US20130161714A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-06-27
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