- Patent Title: Thin-film thermistor element and method of manufacturing the same
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Application No.: US14111932Application Date: 2013-07-09
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Publication No.: US09659691B2Publication Date: 2017-05-23
- Inventor: Kenji Ito , Tadashi Toyoda
- Applicant: SEMITEC Corporation
- Applicant Address: JP Tokyo
- Assignee: SEMITEC CORPORATION
- Current Assignee: SEMITEC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Cantor Colburn LLP
- Priority: JP2012-157278 20120713
- International Application: PCT/JP2013/068749 WO 20130709
- International Announcement: WO2014/010591 WO 20140116
- Main IPC: H01C7/10
- IPC: H01C7/10 ; H01C7/04 ; C22F1/14 ; H01C17/075
Abstract:
Provided is a thin-film thermistor element including a Si substrate 2, a thermistor thin film 5 formed on the Si substrate 2, and an electrode 3 made of platinum, an alloy thereof or the like and formed on, under or inside the thermistor thin film 5. The electrode 3 is formed from a film deposited containing oxygen and nitrogen and then crystallized by heat treatment.
Public/Granted literature
- US20150170805A1 THIN-FILM THERMISTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-06-18
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