Invention Grant
- Patent Title: Pattern forming method
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Application No.: US15065129Application Date: 2016-03-09
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Publication No.: US09659816B2Publication Date: 2017-05-23
- Inventor: Atsushi Hieno , Koji Asakawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-061796 20150324
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/40 ; H01L21/768 ; G03F7/20 ; G03F7/00 ; H01L21/027 ; G03F7/16 ; H01L21/311 ; B81C1/00 ; B82Y40/00 ; B82Y30/00 ; H01L21/306 ; H01L21/02 ; H01L21/033

Abstract:
A pattern forming method in an embodiment includes forming, on or above a substrate, a block copolymer layer containing a first polymer and a second polymer having lower surface energy than the first polymer, heat treating the block copolymer layer to separate the block copolymer layer into a first phase containing the first polymer and a second phase containing the second polymer, and using an atomic layer deposition process, selectively forming a metal layer on the first phase and selectively removing the second phase.
Public/Granted literature
- US20160284560A1 PATTERN FORMING METHOD Public/Granted day:2016-09-29
Information query
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