Invention Grant
- Patent Title: Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
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Application No.: US15085682Application Date: 2016-03-30
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Publication No.: US09659828B2Publication Date: 2017-05-23
- Inventor: Yun-Hyuck Ji , Beom-Yong Kim , Seung-Mi Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0111825 20111031
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8238 ; H01L21/28 ; H01L29/49 ; H01L21/02 ; H01L29/51
Abstract:
A semiconductor device includes a gate dielectric layer over a substrate, a metal layer over the gate dielectric layer, a capping layer over the metal layer, wherein the capping layer includes a plurality of dipole forming elements concentrated at the interface between the metal layer and the capping layer.
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