Invention Grant
- Patent Title: Semiconductor devices, multi-die packages, and methods of manufacture thereof
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Application No.: US14671824Application Date: 2015-03-27
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Publication No.: US09659863B2Publication Date: 2017-05-23
- Inventor: Chen-Hua Yu , Hsien-Wei Chen , An-Jhih Su , Chi-Hsi Wu , Der-Chyang Yeh , Shih-Peng Tai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/04 ; H01L23/48 ; H01L21/00 ; H01L21/4763 ; H01L23/528 ; H01L21/56 ; H01L21/311 ; H01L21/768 ; H01L21/02 ; H01L23/535 ; H01L23/00 ; H01L23/538 ; H01L23/525

Abstract:
Semiconductor device, multi-die packages, and methods of manufacture thereof are described. In an embodiment, a semiconductor device may include: first conductive pillars and second conductive pillars respectively aligned to a first row of first pins and a second row of second pins of a first die, the first pins and the second pins differing in function; a first insulating layer covering surfaces of the first conductive pillars and the second conductive pillars facing away from the first die; first pads disposed on a surface of the first insulating layer facing away from the first die, the first pads substantially aligned to the first conductive pillars; and first traces coupled to the first pads, the first traces extending over a portion of the first insulating layer covering the second conductive pillars.
Public/Granted literature
- US20160155730A1 Semiconductor Devices, Multi-Die Packages, and Methods of Manufacture Thereof Public/Granted day:2016-06-02
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