Invention Grant
- Patent Title: POP structures with dams encircling air gaps and methods for forming the same
-
Application No.: US15042225Application Date: 2016-02-12
-
Publication No.: US09659918B2Publication Date: 2017-05-23
- Inventor: Chen-Hua Yu , Dean Wang , Chen-Shien Chen , Chung-Shi Liu , Jiun Yi Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L25/00 ; H01L23/29 ; H01L21/56 ; H01L25/10 ; H01L23/31 ; H01L23/498 ; H01L21/764 ; H01L23/00 ; H01L23/36

Abstract:
A device includes a bottom package component that includes a bottom die, and a dam over a top surface of the bottom die. The dam has a plurality of sides forming a partial ring, with an air gap surrounded by the plurality of side portions. The air gap overlaps the bottom die. A top package component is bonded to the bottom package component, wherein the air gap separates a bottom surface of the top package component from the bottom die.
Public/Granted literature
- US20160163683A1 POP Structures with Dams Encircling Air Gaps and Methods for Forming the Same Public/Granted day:2016-06-09
Information query
IPC分类: