A semiconductor device having a plurality of fins including at least one first fin and at least one second fin formed on a semiconductor substrate is provided. Each of the first fin and second fin has a first portion and a second portion. A gate electrode structure overlies the first portion of the plurality of fins. The gate electrode structure includes a gate electrode, and a gate dielectric layer between the gate electrode and the plurality of fins, A first electrode overlies the second portion of the plurality of fins and the first electrode is in electrical contact with the second portion of the plurality of fins. The gate electrode structure is in direct physical contact with the first portion of the first fin and the gate electrode structure is spaced apart from the first portion of the second fin.