A one-time programmable memory (OTP) is provided that includes a combined word line programming line (WL-PL). The OTP includes a programmable transistor having a first threshold voltage and a first breakdown voltage, and a pass transistor having a second threshold voltage and a second breakdown voltage. The combined WL-PL is electrically connected to respective gate electrodes of both the programmable transistor and the pass transistor so that both receive the same control voltage. The second gate electrode has a work function that is greater than that of the first gate electrode, so that the second gate breakdown voltage is greater than the first gate breakdown voltage, which enables the use of the combined WL-PL.