Invention Grant
- Patent Title: Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation
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Application No.: US14964026Application Date: 2015-12-09
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Publication No.: US09659960B1Publication Date: 2017-05-23
- Inventor: Kangguo Cheng , Juntao Li , Zuoguang Liu , Xin Miao
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Fleit Gibbons Gutman Bongini Bianco PL
- Agent Thomas S. Grzesik
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02 ; H01L29/45 ; H01L29/161 ; H01L21/762 ; H01L29/06 ; H01L29/78 ; H01L21/84 ; H01L29/08
Abstract:
A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.
Public/Granted literature
- US20170170195A1 EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOUT EDGE STRAIN RELAXATION Public/Granted day:2017-06-15
Information query
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