Invention Grant
- Patent Title: Lateral/vertical semiconductor device
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Application No.: US15208309Application Date: 2016-07-12
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Publication No.: US09660038B2Publication Date: 2017-05-23
- Inventor: Grigory Simin , Mikhail Gaevski , Michael Shur
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/12 ; H01L29/20 ; H01L29/861 ; H01L29/78 ; H01L29/66 ; H01L29/778 ; H01L29/423 ; H01L29/872 ; H01L29/93 ; H01L29/10 ; H01L23/367 ; H01L29/40 ; H01L29/417 ; H01L29/06
Abstract:
A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
Public/Granted literature
- US20160322466A1 Lateral/Vertical Semiconductor Device Public/Granted day:2016-11-03
Information query
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