Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15073633Application Date: 2016-03-17
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Publication No.: US09660042B1Publication Date: 2017-05-23
- Inventor: Ching-Wen Hung , Jia-Rong Wu , Yi-Hui Lee , Ying-Cheng Liu , Chih-Sen Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201610096054 20160222
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L29/45 ; H01L29/08 ; H01L21/265 ; H01L21/3205 ; H01L29/66 ; H01L29/49 ; H01L23/535
Abstract:
A semiconductor device and manufacturing method thereof are provided in the present invention. A second opening is formed corresponding to a gate structure after a step of forming a first opening corresponding to an epitaxial layer. After the step of forming the second opening, a pre-amorphization implantation process is performed to form an amorphous region in the epitaxial layer, and the influence of the process of forming the second opening on the amorphous region may be avoided. The semiconductor device formed by the manufacturing method of the present invention includes a contact structure and an alloy layer. The contact structure is disposed in the second opening for being electrically connected to a metal gate. The alloy layer is disposed on the metal gate and disposed between the metal gate and the contact structure. The alloy layer includes an alloy of the material of the metal gate.
Information query
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