Invention Grant
- Patent Title: Ohmic contact to semiconductor layer
-
Application No.: US14636546Application Date: 2015-03-03
-
Publication No.: US09660043B2Publication Date: 2017-05-23
- Inventor: Mikhail Gaevski , Grigory Simin , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LeBatt, LLC
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L29/20 ; H01L21/285 ; H01L29/417 ; H01L33/38 ; H01L29/778
Abstract:
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
Public/Granted literature
- US20150179751A1 Ohmic Contact to Semiconductor Layer Public/Granted day:2015-06-25
Information query
IPC分类:
