Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US14438824Application Date: 2014-01-09
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Publication No.: US09660046B2Publication Date: 2017-05-23
- Inventor: Sachiko Aoi , Yukihiko Watanabe , Katsumi Suzuki , Shoji Mizuno
- Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
- Applicant Address: JP Nagakute JP Toyota JP Kariya
- Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee Address: JP Nagakute JP Toyota JP Kariya
- Agency: Oliff PLC
- Priority: JP2013-011918 20130125
- International Application: PCT/JP2014/000060 WO 20140109
- International Announcement: WO2014/115494 WO 20140731
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/739 ; H01L29/16 ; H01L29/417 ; H01L29/08 ; H01L29/20 ; H01L29/06
Abstract:
A method of manufacturing a semiconductor device includes: forming a first trench in a first area of a drift layer that has a surface including the first area and a second area; growing a crystal of a p-type base layer on a surface of the drift layer after forming the first trench; and growing a crystal of an n-type source layer on a surface of the base layer. Material of the drift layer, the base layer, and the source layer are a wide-gap semiconductor.
Public/Granted literature
- US20150263130A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-09-17
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