A method for producing a semiconductor device includes forming a first insulating film around a fin-shaped semiconductor layer and forming a pillar-shaped semiconductor layer and forming a second diffusion layer in an upper portion of the fin-shaped semiconductor layer and a lower portion of the pillar-shaped semiconductor layer. A metal-semiconductor compound is formed on the second diffusion layer. A first metal is deposited to form a gate electrode and a gate line. Second and third metal films are deposited to form a first contact in which the second metal film surrounds a sidewall of an upper portion of the pillar-shaped semiconductor layer, and a second contact connects an upper portion of the first contact and an upper portion of the pillar-shaped semiconductor layer. A third contact is formed on the gate line.