Invention Grant
- Patent Title: Light emitting diode with nanostructured layer and methods of making and using
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Application No.: US14941253Application Date: 2015-11-13
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Publication No.: US09660142B2Publication Date: 2017-05-23
- Inventor: Valery K. Smirnov , Dmitry S. Kibalov
- Applicant: Wostec, Inc.
- Applicant Address: US CA San Francisco
- Assignee: Wostec, Inc.
- Current Assignee: Wostec, Inc.
- Current Assignee Address: US CA San Francisco
- Agency: Lowe Graham Jones PLLC
- Agent Bruce E. Black
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/22 ; B82Y20/00 ; H01L33/00 ; H01L33/32 ; H01L33/30 ; B82Y40/00 ; B82Y30/00
Abstract:
A light emitting diode has a plurality of layers including at least two semiconductor layers. A first layer of the plurality of layers has a nanostructured surface which includes a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern, each ridge element having a wavelike cross-section and oriented substantially in a first direction.
Public/Granted literature
- US20160133791A1 LIGHT EMITTING DIODE WITH NANOSTRUCTURED LAYER AND METHODS OF MAKING AND USING Public/Granted day:2016-05-12
Information query
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