Invention Grant
- Patent Title: Current constriction for spin torque MRAM
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Application No.: US15157467Application Date: 2016-05-18
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Publication No.: US09660180B2Publication Date: 2017-05-23
- Inventor: Guohan Hu , Daniel C. Worledge
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12
Abstract:
Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
Public/Granted literature
- US20170033280A1 CURRENT CONSTRICTION FOR SPIN TORQUE MRAM Public/Granted day:2017-02-02
Information query
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