Invention Grant
- Patent Title: Silicon nitride wear resistant member and method for producing silicon nitride sintered compact
-
Application No.: US14896775Application Date: 2014-06-11
-
Publication No.: US09663407B2Publication Date: 2017-05-30
- Inventor: Haruhiko Yamaguti
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
- Applicant Address: JP Tokyo JP Yokohama-Shi, Kanagawa-Ken
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- Current Assignee Address: JP Tokyo JP Yokohama-Shi, Kanagawa-Ken
- Agency: Burr & Brown, PLLC
- Priority: JP2013-124875 20130613
- International Application: PCT/JP2014/065436 WO 20140611
- International Announcement: WO2014/200014 WO 20141218
- Main IPC: C04B35/587
- IPC: C04B35/587 ; C04B35/593 ; F16C33/32

Abstract:
The present invention provides a silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. Due to above structure, there can be provided a wear resistant member comprising the silicon nitride sintered compact having an excellent wear resistance and processability.
Public/Granted literature
- US20160137556A1 SILICON NITRIDE WEAR RESISTANT MEMBER AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED COMPACT Public/Granted day:2016-05-19
Information query
IPC分类: