Invention Grant
- Patent Title: Semiconductor integrated circuit device having electrically rewriteable read-dedicated memory
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Application No.: US15174976Application Date: 2016-06-06
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Publication No.: US09666288B2Publication Date: 2017-05-30
- Inventor: Kazuhiro Matsunami , Mutsuo Nishikawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-141241 20150715
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; H01L27/11521 ; G11C16/30 ; G11C5/06 ; H01L27/115 ; G06F12/02

Abstract:
On an IC chip, a first ground wiring line and a second ground wiring line that extends from a connection site with the first ground wiring line are disposed in a doubled manner. Among EPROMs storing identical data, the source of a first EPROM is connected to the second ground wiring line and the source of a second EPROM is connected to the first ground wiring line. The drains of the EPROMs are electrically connected to a write voltage line. An OR circuit outputs as 1-bit data of the memory circuit, the logical sum of the data stored by at least two of the EPROMs storing identical data. The EPROMs and the OR circuit are disposed near each other on the IC chip.
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