Invention Grant
- Patent Title: Ferroelectric thin film-forming sol-gel solution
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Application No.: US14181394Application Date: 2014-02-14
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Publication No.: US09666331B2Publication Date: 2017-05-30
- Inventor: Toshihiro Doi , Hideaki Sakurai , Nobuyuki Soyama
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: JP2013-056229 20130319
- Main IPC: H01L41/318
- IPC: H01L41/318 ; H01L41/187 ; H01L41/09 ; C08K5/52 ; H01B3/44 ; C23C18/12

Abstract:
This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.
Public/Granted literature
- US20140288219A1 FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION Public/Granted day:2014-09-25
Information query
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