Invention Grant
- Patent Title: Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
-
Application No.: US14291659Application Date: 2014-06-17
-
Publication No.: US09666449B2Publication Date: 2017-05-30
- Inventor: Randy J. Koval
- Applicant: Randy J. Koval
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L21/3213 ; H01L21/28 ; H01L21/3205 ; H01L27/11582

Abstract:
An embodiment of a method of forming a control gate includes forming a conductor having a concentration of germanium that varies with a thickness of the conductor, and removing portions of the conductor at a variable rate that is governed, at least in part, by the concentration of the germanium.
Public/Granted literature
Information query
IPC分类: