Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15067790Application Date: 2016-03-11
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Publication No.: US09666477B2Publication Date: 2017-05-30
- Inventor: Naofumi Ohashi , Satoshi Takano
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2015-068999 20150330
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/768
Abstract:
A method of manufacturing a semiconductor device includes forming a first insulating film as a portion of a laminated insulating film on a substrate in which a plurality of circuit configurations is formed; polishing the first insulating film; measuring a film thickness distribution of the first insulating film; and forming a second insulating film as a portion of the laminated insulating film on the polished first insulating film at a film thickness distribution differing from the film thickness distribution of the first insulating film to correct a film thickness of the laminated insulating film.
Public/Granted literature
- US20160293480A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-10-06
Information query
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