Invention Grant
- Patent Title: Self aligned silicon carbide contact formation using protective layer
-
Application No.: US15265081Application Date: 2016-09-14
-
Publication No.: US09666482B1Publication Date: 2017-05-30
- Inventor: Ravi Keshav Joshi , Romain Esteve , Markus Kahn , Kurt Pekoll , Juergen Steinbrenner , Gerald Unegg
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/768 ; H01L29/16 ; H01L29/78 ; H01L29/10 ; H01L29/45 ; H01L29/66 ; H01L21/04
Abstract:
A silicon-carbide substrate that includes a doped contact region and a dielectric layer is provided. A protective layer is formed on the dielectric layer. A structured mask is formed on the protective layer. Sections of the protective layer and the dielectric layer that are exposed by openings in the mask are removed. The structured mask is removed. A metal layer is deposited such that a first portion of the metal layer directly contacts the doped contact region and a second portion of the metal layer lines the remaining sections of the protective layer and the dielectric layer. A first rapid thermal anneal process is performed. After performing the first rapid thermal anneal process, the second portion of the metal layer and the remaining section of the protective layer are removed without removing the first portion of the metal layer.
Information query
IPC分类:
