Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US14988450Application Date: 2016-01-05
-
Publication No.: US09666509B2Publication Date: 2017-05-30
- Inventor: Yuya Ohashi , Jun Yamashita , Yoshio Fujii , Kohei Shirokura
- Applicant: NEW JAPAN RADIO CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: New Japan Radio Co., Ltd.
- Current Assignee: New Japan Radio Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: JP2015-006359 20150116; JP2015-140326 20150714
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H01L23/495 ; H03K19/00 ; H03K19/003 ; H01L23/31 ; H01L23/522

Abstract:
One embodiment provides a semiconductor device having a first chip for lowering an input voltage and a second chip for performing signal processing, mounted on a die pad. Lead terminals are divided into a first lead row and a second lead row. The first lead row are connected with the first chip, the first chip are connected with the second chip or the second lead row, and the second chip are connected with the second lead row. A distance between the lead terminals of the first lead row is set longer than a distance between the lead terminals of the second lead row, and a sealing resin is provided to fill at least between the lead terminals of the first lead row.
Public/Granted literature
- US20160211200A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-07-21
Information query
IPC分类: