Invention Grant
- Patent Title: Isolation method for a stand alone high voltage laterally-diffused metal-oxide semiconductor (LDMOS) transistor
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Application No.: US14597470Application Date: 2015-01-15
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Publication No.: US09666511B2Publication Date: 2017-05-30
- Inventor: Tzu-Ming Huang , Shen-Ping Wang , Lieh-Chuan Chen , Po-Tao Chu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/00 ; H01L23/00
Abstract:
A semiconductor package having a lead frame over which a first device and a second device are spaced is provided. The lead frame includes a die pad upon which a first chip and a second chip are spaced and bonded. The first chip includes the first device, which has a first operating voltage. The second chip includes the second device, which has a second operating voltage greater than the first operating voltage. A dielectric layer is arranged between the die pad and the second device. A method for manufacturing the semiconductor package is also provided.
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