According to one embodiment a semiconductor memory device includes a first stacked body, a pillar, a memory film, a capacitive element, a first wiring, and a second wiring. The capacitive element includes a first conductive member and a second conductive member. A first length of the first conductive member in a first direction is larger than a second length of the first conductive member in a second direction crossing the first direction. A third length of the first conductive member in a third direction crossing the first direction and the second direction is larger than the second length. A fourth length of the second conductive member in the first direction is larger than a fifth length of the second conductive member in the second direction. A sixth length of the second conductive member in the third direction is larger than the fifth length.