Invention Grant
- Patent Title: CMOS image sensor structure
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Application No.: US14688941Application Date: 2015-04-16
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Publication No.: US09666619B2Publication Date: 2017-05-30
- Inventor: Chien-Chang Huang , Wei-Tung Huang , Yen-Hsiang Hsu , Yu-Lung Yeh , Chun-Chieh Fang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/146

Abstract:
A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.
Public/Granted literature
- US20160307946A1 CMOS IMAGE SENSOR STRUCTURE Public/Granted day:2016-10-20
Information query
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