Invention Grant
- Patent Title: External storage device and method of manufacturing external storage device
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Application No.: US14203037Application Date: 2014-03-10
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Publication No.: US09666659B2Publication Date: 2017-05-30
- Inventor: Yasutaka Nakashiba , Kenta Ogawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-284348 20091215
- Main IPC: H01L49/02
- IPC: H01L49/02 ; G11C5/00 ; H01L21/56 ; H01L23/31 ; H01L23/498 ; H01L23/522 ; H01L23/00 ; H05K3/00 ; H01L23/48 ; H01L27/06 ; H05K1/11 ; H05K3/28

Abstract:
An external storage device including an interconnect substrate having a contact type external terminal, at least one semiconductor chip disposed over a first surface of the interconnect substrate, and a sealing resin layer which seals the at least one semiconductor chip and does not cover the external terminal. The at least one semiconductor chip includes a storage device, an inductor being connected to the storage device, a driver circuit configured to control the inductor and an interconnect layer. The interconnect layer is formed at a first surface of the semiconductor chip and includes the inductor. The first surface of the semiconductor chip is other than facing the first surface of the interconnect substrate, and the inductor and the driver circuit are connected to each other through the interconnect layer.
Public/Granted literature
- US20140191363A1 EXTERNAL STORAGE DEVICE AND METHOD OF MANUFACTURING EXTERNAL STORAGE DEVICE Public/Granted day:2014-07-10
Information query
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