Invention Grant
- Patent Title: Solar cell structures having III-V base layers
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Application No.: US14982991Application Date: 2015-12-29
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Publication No.: US09666742B2Publication Date: 2017-05-30
- Inventor: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Louis J. Percello
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00 ; H01L31/075 ; H01L31/074 ; H01L31/0304 ; H01L31/20 ; H01L31/036 ; H01L31/077 ; H01L31/0216 ; H01L31/0224
Abstract:
Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1-x passivated by amorphous SiyGe1-y:H.
Public/Granted literature
- US20160118525A1 III-V PHOTOVOLTAIC ELEMENTS Public/Granted day:2016-04-28
Information query
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