Invention Grant
- Patent Title: Method of manufacturing sealed body and method of manufacturing light-emitting device
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Application No.: US13687354Application Date: 2012-11-28
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Publication No.: US09666755B2Publication Date: 2017-05-30
- Inventor: Akihisa Shimomura
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-260826 20111129
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L51/52

Abstract:
Methods of manufacturing a sealed body and a light-emitting device with high airtightness in which generation of a crack in a substrate and a frit glass in an overlap region where laser light irradiation is started and ended is prevented are provided. A high-reflectivity region having high reflectivity with respect to laser light and a low-reflectivity region having lower reflectivity than the high-reflectivity region are provided in a region which overlaps with the frit glass and is over a substrate facing a substrate on which the frit glass is formed. When scanning with laser light is started from the low-reflectivity region, a crack is less likely to be generated in the frit glass.
Public/Granted literature
- US20130137200A1 Method of Manufacturing Sealed Body and Method of Manufacturing Light-Emitting Device Public/Granted day:2013-05-30
Information query
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