A memory structure and a manufacturing method for the same are disclosed. The memory structure comprises a lower electrode, an upper insulating layer, a material layer, a dielectric film, and an upper electrode. The upper insulating layer is on the lower electrode. The material layer is on the upper insulating layer. The upper insulating layer and the material layer have a common opening to expose a portion of the lower electrode. The dielectric film is on the exposed portion of the lower electrode. The dielectric film and the material layer contain a same first transition metal. The upper electrode is on the dielectric film and fills the common opening.