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US09666798B1 Switching elements, resistive random access memory devices including the same, and methods of manufacturing the switching elements and the resistive random access memory devices 有权

  • Patent Title: Switching elements, resistive random access memory devices including the same, and methods of manufacturing the switching elements and the resistive random access memory devices
  • Application No.: US15206076
    Application Date: 2016-07-08
  • Publication No.: US09666798B1
    Publication Date: 2017-05-30
  • Inventor: Jae Yeon Lee
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon
  • Assignee: SK HYNIX INC.
  • Current Assignee: SK HYNIX INC.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2016-0013129 20160202
  • Main IPC: H01L45/00
  • IPC: H01L45/00
Switching elements, resistive random access memory devices including the same, and methods of manufacturing the switching elements and the resistive random access memory devices
Abstract:
A method of manufacturing a switching element is provided. The method includes forming a pillar-shaped structure having a first electrode, an insulation layer and a second electrode which are stacked on a substrate. A tilted doping process is performed to inject dopants into at least a portion of the insulation layer. The tilted doping process forms a threshold switching operation region in the insulation layer.
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