Invention Grant
- Patent Title: Sensor device and method for making thereof
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Application No.: US15009855Application Date: 2016-01-29
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Publication No.: US09670057B1Publication Date: 2017-06-06
- Inventor: Marten Oldsen
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L23/02 ; H01L23/06 ; H01L21/00 ; B81B3/00 ; B81C1/00
Abstract:
A sensor device may include an electronic device that has at least one integrated circuit device and a MEMS sensor that are each monolithically integrated with a semiconductor substrate. The sensor device may include a suspension structure that suspends the MEMS sensor over a back cavity within the semiconductor substrate. The suspension structure may be springs or a spring structure formed from etching the front side of the substrate.
Information query
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