A method of adjusting vapor-phase growth apparatuses in which the individual difference of a heater-set temperature and a surface temperature of substrate-mounted plate among the vapor-phase growth apparatuses is eliminated. The method of adjusting vapor-phase growth apparatuses includes a thermocouple-location-adjusting step, in which the relative location of a thermocouple and a heater is adjusted so that the change amount of the surface temperature of a substrate-mounted plate with respect to the change amount in the heater-set temperature reaches a predetermined value, and a temperature-control-value-correcting step, in which the thermocouple is disposed at the location adjusted in the thermocouple-location-adjusting step, the surface temperature of the substrate-mounted plate is obtained when the substrate-mounted plate is heated by the heater in accordance with a prescribed temperature-set value, and a temperature-control value with respect to a temperature-set value is corrected on the basis of the difference between the temperature-set value at this time and the surface temperature of the substrate-mounted plate.