Invention Grant
- Patent Title: Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia
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Application No.: US14957536Application Date: 2015-12-02
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Publication No.: US09670594B2Publication Date: 2017-06-06
- Inventor: Tadao Hashimoto
- Applicant: SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
- Applicant Address: US CA Buellton
- Assignee: SixPoint Materials, Inc.
- Current Assignee: SixPoint Materials, Inc.
- Current Assignee Address: US CA Buellton
- Agency: Strategic Innovation IP Law Offices, P.C.
- Main IPC: C30B29/40
- IPC: C30B29/40 ; C30B25/02 ; C30B7/10 ; H01L29/20 ; C01B21/06
Abstract:
In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.
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