Invention Grant
- Patent Title: Data storage in degraded solid state memory
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Application No.: US14651091Application Date: 2013-12-20
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Publication No.: US09671973B2Publication Date: 2017-06-06
- Inventor: Tong Zhang
- Applicant: Empire Technology Development LLC
- Applicant Address: US DE Wilmington
- Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee Address: US DE Wilmington
- Agency: Moritt Hock & Hamroff LLP
- Agent Steven S. Rubin, Esq.
- International Application: PCT/US2013/077005 WO 20131220
- International Announcement: WO2015/094349 WO 20150625
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F3/06 ; G11C16/34 ; G11C29/12 ; G11C29/52 ; G06F11/10 ; G11C29/04

Abstract:
Technologies are generally described for systems, devices, and methods effective to operate a memory device. A memory controller may compress initial data to produce compressed data. The memory controller may select a storage block in the memory device. The memory controller may identify one or more positions of defective cells in the selected storage block. The memory controller may manipulate the compressed data based on the identified one or more positions to produce manipulated data. The memory controller may store the manipulated data in the selected storage block.
Public/Granted literature
- US20160283117A1 DATA STORAGE IN DEGRADED SOLID STATE MEMORY Public/Granted day:2016-09-29
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