There are provided a page buffer and a memory device having the same. A page buffer includes a reference current generation unit for precharging a bit line by generating a reference current, a current sensing unit for changing or maintaining a voltage of a select node, based on a change in current of the bit line, a first data sensing unit for storing first data, based on a change in the voltage of the select node, and a second data sensing unit for, when the first data is stored in the first data sensing unit, consecutively storing second data, based on the change in the voltage of the select node.