Invention Grant
- Patent Title: Semiconductor memory capable of reading data without accessing memory cell
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Application No.: US15066851Application Date: 2016-03-10
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Publication No.: US09672887B2Publication Date: 2017-06-06
- Inventor: Hironobu Furuhashi , Masahiko Nakayama , Katsuhiko Hoya
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C7/22 ; G11C7/10

Abstract:
According to one embodiment, a semiconductor memory includes a first memory cell stably storing data after a first time from an end of a write operation, a buffer latching the data in the write operation, and a control circuit controlling a first read operation when the first read operation is executed right after the write operation for the first memory cell is executed, where the first read operation is an operation for the first memory cell, and the first read operation is an operation reading the data from the buffer without accessing the first memory cell.
Public/Granted literature
- US20170069366A1 SEMICONDUCTOR MEMORY CAPABLE OF READING DATA WITHOUT ACCESSING MEMORY CELL Public/Granted day:2017-03-09
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