Invention Grant
- Patent Title: Dual-inverter memory device and operating method thereof
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Application No.: US15043165Application Date: 2016-02-12
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Publication No.: US09672899B2Publication Date: 2017-06-06
- Inventor: Gong Zhang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201510373294 20150630
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; G11C11/417 ; G11C11/412
Abstract:
A memory device may include a first inverter, a second inverter, and a control transistor. The control transistor is electrically connected to each of an output terminal of the first inverter and an input terminal of the second inverter for controlling an electrical connection between the output terminal of the first inverter and the input terminal of the second inverter.
Public/Granted literature
- US20170004875A1 MEMORY DEVICE AND RELATED METHOD Public/Granted day:2017-01-05
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