6T bitcell for single port static random access memories (SRAM) with single-ended read and single-ended write
Abstract:
A 6T bitcell for single port SRAM that performs single ended read and single ended write is described. The presently described bitcell gives huge advantage in terms of area, dynamic power, leakage power and performance over the prior art in the industry. The bitcell and architecture does not have either a write bitline pair or a read bitline for each bitcell. It has only one read bitline per mux.
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