Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US14557387Application Date: 2014-12-01
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Publication No.: US09673040B2Publication Date: 2017-06-06
- Inventor: Yu-Ru Yang , Chia-Hsun Tseng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW103138083A 20141103
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/3205 ; H01L21/4763 ; H01L21/02 ; H01L29/49 ; H01L21/28 ; H01L21/8234 ; H01L29/51
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a high-k dielectric layer thereon; forming a first work function layer on the high-k dielectric layer; and forming a first oxygen-containing layer on the first work function layer.
Public/Granted literature
- US20160126139A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-05-05
Information query
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