Invention Grant
- Patent Title: Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
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Application No.: US14842806Application Date: 2015-09-01
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Publication No.: US09673042B2Publication Date: 2017-06-06
- Inventor: Robert Jan Visser , Ranga Rao Arnepalli , Prerna Goradia
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/02 ; C23C16/24 ; C23C16/56 ; H01L21/768
Abstract:
A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.
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