A patterned photoresist having an overlay tolerance of (x+y)/2 is formed over preselected hard mask portions or semiconductor fin portions, wherein x is a width of a semiconductor fin and y is a distance between a neighboring pair of semiconductor fins. Hard mask portions or semiconductor fin portions not protected by the patterned photoresist are then removed by an isotropic etching process. The patterned photoresist is removed. In some embodiments, the remaining hard mask portions are employed as fin forming etch masks.