Invention Grant
- Patent Title: Method for forming stair-step structures
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Application No.: US14665815Application Date: 2015-03-23
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Publication No.: US09673057B2Publication Date: 2017-06-06
- Inventor: In Deog Bae , Qian Fu
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/302 ; H01L21/461 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C03C1/00 ; H01L39/24 ; H01L21/3065 ; H01L21/306 ; H01L27/11556 ; H01L27/11582 ; H01L21/3105 ; H01L27/11548 ; H01L27/11573
Abstract:
A method for forming a stair-step structure in a substrate within a plasma processing chamber is provided. An organic mask is formed over the substrate. The organic mask is trimmed with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask. The substrate is etched. The steps of trimming the organic mask and etching the substrate are cyclically repeated a plurality of times.
Public/Granted literature
- US20160284555A1 METHOD FOR FORMING STAIR-STEP STRUCTURES Public/Granted day:2016-09-29
Information query
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