Invention Grant
- Patent Title: Semiconductor device having mirror-symmetric terminals and methods of forming the same
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Application No.: US14153606Application Date: 2014-01-13
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Publication No.: US09673135B2Publication Date: 2017-06-06
- Inventor: John D. Weld , Douglas Dean Lopata , Wei Zhang
- Applicant: Altera Corporation
- Applicant Address: US CA San Jose
- Assignee: Altera Corporation
- Current Assignee: Altera Corporation
- Current Assignee Address: US CA San Jose
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/495 ; H01L29/78 ; H01L21/48 ; H01L23/00
Abstract:
A semiconductor device having substantially minor-symmetric terminals and methods of forming the same. In one embodiment, the semiconductor device includes a semiconductor switch having a control node and a switched node, the switched node being coupled to first and second output terminals of the semiconductor device, the first and second output terminals being positioned in a substantially minor-symmetric arrangement on the semiconductor device. The semiconductor device also includes a control element having first and second input nodes and an output node, the first and second input nodes being coupled to first and second input terminals, respectively, of the semiconductor device and the output node being coupled to the control node of the semiconductor switch, the first and second input terminals being substantially center-positioned on the semiconductor device.
Public/Granted literature
- US20150200155A1 SEMICONDUCTOR DEVICE HAVING MIRROR-SYMMETRIC TERMINALS AND METHODS OF FORMING THE SAME Public/Granted day:2015-07-16
Information query
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