Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15207559Application Date: 2016-07-12
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Publication No.: US09673142B2Publication Date: 2017-06-06
- Inventor: Kazuyuki Sakata , Takafumi Betsui
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2015-168596 20150828
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L23/00

Abstract:
A semiconductor device with enhanced reliability. The semiconductor device has a wiring substrate which includes a first terminal electrically connected with a power supply potential supply section of a semiconductor chip, a first wiring coupling the power supply potential supply section with the first terminal, a second terminal electrically connected with a reference potential supply section of the semiconductor chip, and a second wiring coupling the reference potential supply section with the second terminal. The first terminal and second terminal are arranged closer to the periphery of the wiring substrate than the semiconductor chip. The second wiring is extended along the first wiring.
Public/Granted literature
- US20170062322A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-02
Information query
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