Invention Grant
- Patent Title: High-frequency package
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Application No.: US14883635Application Date: 2015-10-15
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Publication No.: US09673152B2Publication Date: 2017-06-06
- Inventor: Chih-Wen Huang
- Applicant: WIN Semiconductors Corp.
- Applicant Address: TW Tao Yuan
- Assignee: WIN Semiconductors Corp.
- Current Assignee: WIN Semiconductors Corp.
- Current Assignee Address: TW Tao Yuan
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/66 ; H01L23/00 ; H01L23/495
Abstract:
A high-frequency package comprises a ground lead occupying a side of the high-frequency package; and a signal lead comprising at least a protrusion protruding from a central portion of the signal lead; wherein the ground lead and the signal lead perform as a transmission line, and the at least a protrusion forms capacitance of the transmission line.
Public/Granted literature
- US20170047292A1 High-Frequency Package Public/Granted day:2017-02-16
Information query
IPC分类:
