Invention Grant
- Patent Title: Semiconductor devices having active regions at different levels
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Application No.: US14682372Application Date: 2015-04-09
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Publication No.: US09673198B2Publication Date: 2017-06-06
- Inventor: Juyoun Kim
- Applicant: Juyoun Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0136844 20141010
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/10 ; H01L29/06 ; H01L21/8234

Abstract:
A semiconductor device has active regions with different conductivity types. A substrate has a PMOS region and an NMOS region. A first active region is in the PMOS region. A second active region is in the NMOS region. A semiconductor layer is on the first active region. A first gate electrode crosses the first active region and extends on the semiconductor layer. A second gate electrode is on the second active region. An upper end of the first active region extends to a level lower than an upper end of the second active region. A lower end of the first active region extends to a level lower than a lower end of the second active region.
Public/Granted literature
- US20160104708A1 SEMICONDUCTOR DEVICES HAVING ACTIVE REGIONS AT DIFFERENT LEVELS Public/Granted day:2016-04-14
Information query
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