Invention Grant
- Patent Title: Gate cutting for a vertical transistor device
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Application No.: US15188510Application Date: 2016-06-21
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Publication No.: US09673199B1Publication Date: 2017-06-06
- Inventor: Brent A. Anderson , Sivananda K. Kanakasabapathy , Stuart A. Sieg , John R. Sporre , Junli Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/82 ; H01L27/092 ; H01L21/8238 ; H01L29/66 ; H01L21/308 ; H01L21/306
Abstract:
A method of gate cutting for a device with multiple vertical transistors is provided. The method includes memorizing an initial structure of the device to identify a location for a gate strap to connect a portion of the multiple vertical transistors, building a bilayer hard mask over the device with a photoresist (PR) opening at the location, removing successive layers of the bilayer hard mask to identify first and second sections of the device based on a position of the PR opening and removing remaining layers of the bilayer hard mask and the first section of the device while preserving the second section of the device to form the gate strap.
Information query
IPC分类:
