Invention Grant
- Patent Title: Shallow trench textured regions and associated methods
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Application No.: US14884181Application Date: 2015-10-15
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Publication No.: US09673250B2Publication Date: 2017-06-06
- Inventor: Homayoon Haddad , Jutao Jiang
- Applicant: SiOnyx, LLC
- Applicant Address: US MA Beverly
- Assignee: SiOnyx, LLC
- Current Assignee: SiOnyx, LLC
- Current Assignee Address: US MA Beverly
- Agency: Pepper Hamilton LLP
- Agent Thomas J. Engellenner; Reza Mollaaghababa
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/028 ; H01L31/18 ; H01L31/0232

Abstract:
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
Public/Granted literature
- US20160035782A1 SHALLOW TRENCH TEXTURED REGIONS AND ASSOCIATED METHODS Public/Granted day:2016-02-04
Information query
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